Magnachip Semiconductor Corporation announced the launch of a new generation Low-Voltage Metal Oxide Semiconductor Field Effect Transistors (LV MOSFETs) featuring lower Rss(on) for battery Protection Circuit Modules (PCMs) in smartphones. As demand for high-end 5G and LTE smartphones increases, extended battery life and strengthened protection features for batteries are becoming important. 5G phones, in particular, need long-lasting […]
Transistor
Power MOSFETs feature high efficiency/ high power density packaging
High power density, optimized performance, and ease of use are key requirements when designing modern power systems. To offer practical solutions for design challenges in end applications, Infineon Technologies AG launches the new generation of OptiMO Source-Down (SD) power MOSFETs. They come in a PQFN 3.3 x 3.3 mm 2 package and a wide voltage class […]
Reference design covers Class-D amplifier and companion power supply
GaN is being embraced in audio, enabling companies to launch better sounding, higher-performance, smaller, and more eye-catching audio systems. And GaN Systems is making it easier to reap the benefits of GaN with the introduction of the GeN2 Amplifier and SMPS Reference Design. GaN Systems released the GeN2 amplifier and companion power supply reference design […]
GaN power ICs handle 2 kW to 20 kW apps
Navitas Semiconductor announced that high-power GaN power IC samples are now available for the first time to data center, solar and electric vehicle (EV) customers worldwide. Navitas GaNFast ICs have first introduced to mobile customers three years ago and have become a mainstream, disruptive force in those markets, enabling unprecedented high-efficiency and ultra-fast charging of […]
SiC MOSFET optimized for high-end automotive applications
STMicroelectronics is introducing its third generation of STPOWER silicon-carbide (SiC) MOSFETs[1], advancing the state-of-the-art in power devices for electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are important target criteria. The market leader in SiC power MOSFETs, ST has incorporated new and advanced design know-how to open up even […]
MOSFETs enable power supplies to meet 80 PLUS Titanium efficiency
onsemi announced its new 600 V SUPERFET V family of MOSFETs. The high-performance devices enable power supplies to meet demanding efficiency regulations such as 80 PLUS Titanium, especially at the highly challenging 10% load condition. As part of the 600 V SUPERFET family, three product groups – FAST, Easy Drive, and FRFET – are optimized […]
80-V Power MOSFETs optimized for high switching frequencies, low voltage overshoot
Alpha and Omega Semiconductor Limited announced the release of our latest 80V Power MOSFET using patented Shield Gate Technology which is optimized for higher switching frequencies used in telecom and server power supply to achieve higher efficiency compared to the previous generation. The new 80V Power MOSFET technology has lower switching losses in hard switching, topologies and […]
Book review: GaN Power Devices and Applications, (published by Power Conversion Publications) edited by Alex Lidow, First Edition
Alex Lidow’s latest book provides an update on gallium-nitride technology and applications. Lidow, CEO and co-founder of Efficient Power Conversion (EPC) and the former CEO of International Rectifier, is actually the book’s editor: besides Lidow, there are 27 other contributors. Lidow says there’s a need for this book because of the numerous advances in GaN […]
High-current-rated MOSFETs target EV apps
Diodes Incorporated has introduced a portfolio of automotive MOSFETs packaged in the space-saving, thermally-efficient TOLL (PowerDI1012-8) package. Capable of operating to 175°C, the 100V-rated DMTH10H1M7STLWQ, and DMTH10H2M5STLWQ, plus the 80V-rated DMTH8001STLWQ MOSFETs occupy 20% less PCB area than the TO263. These devices feature an off-board profile of just 2.4mm. This makes them ideal for use in high-reliability power […]
GaN reference design simplifies development of 65W IC fast charter applications
Silanna Semiconductor has launched a new Active Clamp Flyback (ACF)-based reference design that will simplify and speed the development of 65W 1C fast charger applications. Built around Silanna’s SZ1131 ACF controller and incorporating Transphorm’s Super GaN FET, the RD-29 is a production-ready 65W 1C USB-PD reference design for travel adapters and battery chargers. The reference […]