Solitron Devices is pleased to announce the introduction of the SD11710 the latest in our series of hi-rel MOSFETs and the industry’s first military-grade 700V silicon carbide (SiC) device. Packaged in an extremely rugged hermetically sealed TO-258, the SD11710 is built for the most demanding industrial, aerospace, and defense applications. The SD11710 provides RDS(on) […]
Transistor
How SiC MOSFETs and Si IGBTs boost sustainability in green energy systems
Silicon carbide (SIC) MOSFETs and silicon (Si) IGBTs can both boost sustainability in green energy systems. Of course, they don’t compete across the board, there are uses where one or the other is clearly preferred. When comparing the two technologies, it often comes down to the prioritization of performance characteristics like light weight versus low […]
SuperGaN FETs establish cost-effective design option for power range exceeding 1 kW
Transphorm, Inc. released details on a high-performance, low-cost driver solution. For use in low- to mid-power applications such as LED lighting, charging, microinverters, UPSes, and gaming computers, the design option strengthens the company’s value proposition for customers in those segments of the $3 billion power market. Unlike competing e-mode GaN solutions that require custom drivers […]
Boards let you try power devices in your circuits
Cambridge GaN Devices (CGD) has introduced a range of Application Interface Boards that allow designers to try out the company’s rugged, easy-to-use ICeGaN HEMTs in existing circuits in place of competing MOSFET or GaN devices without having to re-layout the PCB. Application Interface Boards are adaptor PCBs that are soldered to an ICeGaN device, which […]
Silicon carbide MOSFETs feature low on resistance
Solitron Devices is pleased to announce the introduction of the SD11740 , 1200V Silicon Carbide (SiC), low RDS(on) MOSFET. Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications, Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a SOT-227, the SD11740 offers ultra-low RDS(on) of 8.6mΩ. The SOT-227 style […]
700V and 1200V vertical GaN devices demonstrate >1 MHz switching at 1.4kV rated voltage
NexGen Power Systems, Inc. announced engineering sample availability and production schedules for its industry-best 700V and 1200V NexGen Vertical GaN semiconductor devices. NexGen’s 1200V Vertical GaN e-mode Fin-jFETs are the only wide-band-gap devices to have successfully demonstrated >1 MHz switching at 1.4kV rated voltage. Sampling on a limited basis to strategic customers and partners since […]
Controller-GaN FET combo for designs of 140 W small fast-charging devices
EPC & Richtek announces the availability of a 4-switches bidirectional buck-boost controller reference design board that converts an input voltage of 12 V – 24 V to a regulated 5 V – 20 V output voltage and delivers up to 5 A continuous current and 6.5 A maximum current. The combination of the new Richtek […]
Automotive-grade devices available in tiny 32.7 mm x 22.5 mm package
STMicroelectronics has introduced five power-semiconductor bridges in popular configurations, housed in ST’s advanced ACEPACK SMIT package that eases assembly and enhances power density over conventional TO-style packages. Engineers can choose from two STPOWER 650V MOSFET half bridges, a 600V ultrafast diode bridge, a 1200V half-controlled full-wave rectifier, and a 1200V thyristor-controlled bridge leg. All devices meet […]
SiC devices provide high-efficiency for energy infrastructure and industrial apps
onsemi introduced “EliteSiC” as the name of its silicon carbide (SiC) family. This week, the company will showcase three new members of the family – the 1700 V EliteSiC MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes – at the Consumer Electronics Show (CES) in Las Vegas. The new devices provide reliable, high-efficiency performance for energy […]
Power MOSFETs include PQFN dual-side cooled 25-150 V devices
The design of future power electronic systems is continuously pushed to improve state-of-the-art performance and power density. Supporting this trend, Infineon Technologies AG launches a new Source-Down 3.3 x 3.3 mm² PQFN product family in the 25-150 V classes with Bottom-Side (BSC) and Dual-Side Cooling (DSC) variants. The new product family provides significant enhancements on […]